Switching characteristics of 3 kV 4H-SiC GTO thyristors

Abstract

Devices based on SiC have been demonstrated with increasingly larger blocking voltage and higher current handling capability over the last several years. GTO thyristors based on this material have been pursued and devices with blocking voltages of 700-1100 V have recently been demonstrated (Palmour et al., 1996; Agarwal et al., 1997; Fedison et al., 1999). We report on the switching characteristics of 3 kV 4H-SiC GTO thyristors having high current capability, fast turn-off, and large turn-off gain. These GTOs have the highest current handling capability, highest blocking voltage, and highest turn-off gain for a single SiC device reported so far. The very fast switching response of these devices enables high-frequency operation and minimal switching power loss.