Abstract
With the assistance of Pt-catalyzed formic acid vapor, robust Ag-Cu bonding was realized at an ultra-low temperature of 160 °C under 3 MPa for 30 min via the sintering of Ag nanoparticles in situ generated from Ag2O microparticles. The Cu oxide layer at the interface after bonding can be eliminated, which improves the bond strength and electrical conductivity of the joint. A metallic bond contact between the sintered Ag and the Cu substrate is obtained without interfacial solid solution and intermetallic phases, and the shear strength is comparable to previous bonding at a higher temperature. The bonding mechanisms were figured out by comparing the bonding with and without the Pt-catalyzed formic acid vapor. This ultra-low temperature Ag-Cu bonding method may create more flexibilities in the structure design and material selection for power device integration.
Highlights
IntroductionWide bandgap semiconductors such as SiC and GaN are becoming very promising for the high-power and high-temperature devices, which brings new requirements on the die attach materials such as high service temperature, high thermal conductivity, and high reliability [1,2,3,4,5]
Wide bandgap semiconductors such as SiC and GaN are becoming very promising for the high-power and high-temperature devices, which brings new requirements on the die attach materials such as high service temperature, high thermal conductivity, and high reliability [1,2,3,4,5].Owing to the excellent thermal conductivity and electrical conductivity of Ag, Ag nanoparticles have been widely investigated as a new die attach material for high-power devices [6,7,8,9,10,11]
We report a strong Ag-Cu bonding via the sintering of the Ag nanoparticles in situ derived from Ag2 O microparticles at an ultra-low temperature of 160 ◦ C
Summary
Wide bandgap semiconductors such as SiC and GaN are becoming very promising for the high-power and high-temperature devices, which brings new requirements on the die attach materials such as high service temperature, high thermal conductivity, and high reliability [1,2,3,4,5]. A strong Cu bonding via the sintering of Ag2 O microparticles without an interfacial oxide layer has not yet been developed at a low temperature (
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