Rim nucleation and step-train orientation effects in SOI(111) dewetting

Abstract

We demonstrate that the step-train orientation of a vicinal surface plays an important role in solid-state dewetting. Focusing on SOI(111), we observe the formation of hexagonal voids in the silicon film due to dewetting. These voids are surrounded by an asymmetric rim, which is wider on the higher-terrace side compared to the lower-terrace side. Our findings also reveal a layer-by-layer growth of the rim around the dewetting voids during the early stages, before the formation of branched structures. Dewetting fingers develop faster and are thinner in the step-down direction compared to the step-up direction. Kinetic Monte Carlo (KMC) simulations confirm our experimental observations and provide insights into the atomic details underlying rim and finger formation. During the initial stages of dewetting, the nucleation of a new rim layer is not required: Atoms leaving the dewetting void are captured by the adjacent upper step, leading to the growth of the upper terrace that thus surrounds the dewetting void. The nucleation of a new rim layer only becomes necessary when the distance between the edge of the void and the upper terrace increases. The energetics involved in the dewetting kinetics of SOI(111) are consistent with those of SOI(100).