Abstract
ABSTRACT Reactive Ion Etching (RIE) is used to etch the ferroelectric layer for the ferroelectric random access memories (FeRAMs) research, and the effect of RIE on the ferroelectric properties has been studied. The top platinum layer is etched by Ion Beam Etching (IBE) method, little polarization change has been observed after top electrode etching. The ferroelectric layer is etched by RIE, positive ions bombing the sample during etching and result in the positive ions left in the films. A significant polarization suppression has been found for the capacitors because of large amount ions existed in the films. The polarization can be recovered well after RTP annealing. However, the polarization decreases rapidly during fatigue test, which indicats that the introduced ions have not been removed completely after RTP annealing. On the contrary, the capacitor exhibits better fatigue behaviour because of few ions remained in the film after furnace annealing.
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