Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

Abstract

Stacking of InAs/InGaAs/GaAs QDs up to 5 layers has been developed to realize ground state lasing with noticeable output power in the laser diodes with broad and low contrast wave guide (0.6 μm Al0.3Ga0.7As/GaAs). Lasers emitting at 1310 nm were grown by molecular beam epitaxy and processed into 5 μm wide ridge waveguide diodes. Single lateral mode continuous wave operation was achieved in a 3 mm long diode with as-cleaved facets. The threshold current of 26 mA (Jth = 173 A/cm2), a slope efficiency of 0.43 W/A (ηdif = 45%), a characteristic temperature of 85 K, a vertical beam divergence of 45°, and I–V characteristics with turn-on voltages of 1.0 V and series resistance of 1.5 × 10–4 Ω cm2 were realized in one device simultaneously.