Abstract
In order to fabricate Bi-Sr-Ca-Cu-O superconducting thin films, the molecular beam epitaxy (MBE) technique with in situ monitoring by reflection high-energy electron diffraction (RHEED) is used. By coevaporated growth of Bi2Sr2CaCu2O8 on LaAlO3 (100) substrates, RHEED intensity oscillation with a period corresponding to the growth of half a unit cell is observed. Out-of-phase oscillations are observed outside the specular spot. After the end of growth, a 10-minute RHEED intensity recovery at the specular spot is found. Possible mechanisms during and after growth are discussed.
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