Abstract
Recently, dynamical behaviour of reflection high-energy electron diffraction (RHEED) patterns, i.e., RHEED intensity oscillations during molecular beam epitaxy (MBE) growth1,2 andj RHEED intensity variations during atomic layer epitaxy (ALE) growth3,4 of II–VI compounds have been reported. The period of the RHEED intensity oscillation exactly corresponds to a monolayer growth rate of the crystal by MBE. This technique has been utilized to calibrate beam flux, to control growth rate, and to measure quantum well thickness5. The temporal behaviour of specular beam intensity of RHEED during ALE3,4 reflects adsorption processes of impinging molecular beams. Adsorption time for monatomic layer is estimated from the temporal dependence of specular beam intensity. The specular beam intensity varies with time during suspension of ALE at high substrate temperature. This is due to sublimation processes of surface atoms. The sublimation time for the surface layer can be estimated3,4,6,7. Thus the investigation of dynamical behaviour of RHEED intensity gives important informations relevant to surface processes during MBE and ALE.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
