Abstract
c-InN (zincblende structure) films have been successfully grown on GaAs(001) substrates by rf-plasma-assisted molecular beam epitaxy. The X-ray diffraction analysis has confirmed the growth of c-InN films whose growth temperature was 400–550 °C. The structural properties (i.e. surface flatness and crystal quality) of the InN films are obviously improved for the growth condition of the near surface-stoichiometry at the In-rich side. By high resolution transmission electron microscopy images and 2θ/ω X-ray reciprocal space mapping measurements, hexagonal-phase InN (h-InN) is found to be generated from c-InN{111} facets. The volume content of c-InN is estimated to be ∼82% at maximum based on an analysis of the X-ray diffraction intensity. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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