Abstract
The object of this research is to use RF Sputter to deposite ZnS and ZnO layers on the Si(100)substrates。 We measure the emission spectrum and I-V characteristics of samples by using photolumiscence and LED tester, respectively。 We find the I-V characteristics of ZnS LED is superior to ZnO LED。 Also, the process conditions may influence the emission spectrum and the I-V characteristics。
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