固態 Sb2Se3 半導體敏化太陽能電池的製作與特性

Abstract

This thesis presents the solid-state Sb2Se3 semiconductor-sensitized solar cell. The solid-state Sb2S3 semiconductor-sensitized solar cell is also studied and fabricated in our lab. While techniques of the fabrication have been done, the research of Sb2Se3-sensitized solar cells began. The solid-state solar cell is fabricated layer by layer as below. First, the blocking layer is deposited on FTO by hot-spray method. Then, the mesoporous-TiO2 layer is spin-coated above. Sensitizers are deposited on the mesoporous-TiO2. The hole transport material fill into the mesoporous-TiO2 and form over layer above. Finally the Au electrode is sputtered on over layer as the electron collector. The morphology of the cell is analyzed by field emission scanning electron microscope. The transmission spectrum is characterized by UV-visible spectrophotometer. The thickness of the film is measured by the surface profiler. I-V characteristics are measured by Keithley 2400 source meter. The best Sb2Se3-sensitized solar cell yields short circuit current of 0.799 mA/cm2, an open circuit voltage of 0.40 V, a fill factor of 52.1 % and a power conversion efficiency of 0.196 % under full sun. The cell yields an external quantum efficiency of 16.5 % at 350 nm wavelength, and an average external quantum efficiency of 8.65 % over spectrum of 300 to 450 nm.