RF power performance of an LDMOSFET on high-resistivity SOI

Abstract

This paper describes the RF power performance of an LDMOSFET technology on high-resistivity silicon-on-insulator wafers. The technology has an on-state breakdown voltage of greater than 10 V, and an off-state breakdown voltage of greater than 20 V. This device technology is shown to have excellent RF power characteristics at frequencies from 1.9 to 5.8 GHz. At 1.9 GHz, a peak power-added efficiency (PAE) of 63% was achieved with an output power of up to 520 mW from a single RF power cell. At 5.8 GHz, a peak PAE of 35% was achieved with an output power of up to 125 mW from a single RF power cell.