Abstract

We present the design and development of the first fully integrated, two stage Doherty power amplifier (DPA) in the Ka-Band. The DPA is fabricated in a 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. At 26.4 GHz, the amplifier achieves measured small signal gain of 10.3 dB, output power at 1-dB compression point (P1dB) of 25.1 dBm, peak power added efficiency (PAE) of 38%, and PAE of 27% at 6 dB back-off power. To the best of the author's knowledge, this Doherty circuit is the first fully integrated millimeter-wave amplifier that achieves the highest power and a recorded 27% PAE at 6-dB back-off and each unit amplifier has 2 stages.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.