Abstract
Epitaxial growth of β-Ga2O3 thin films by the rf-plasma-assisted molecular-beam epitaxy technique is demonstrated. Growth on (1 0 0) β-Ga2O3 substrates leads to very smooth epilayers, while (2 0 1¯) and (1 0 0) oriented β-Ga2O3 films are obtained on (0 0 1) sapphire and (1 0 0) MgO substrates, respectively. Internal transmittance, refractive index and direct bandgaps are determined.
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