Abstract
This paper addresses experimental RF performance evaluation, and electrical-parameter extraction of different-size ferroelectric varactor shunt switches. Ferroelectric varactor shunt-switch operation is based on the nonlinear dielectric tunability of a Ba0.6Sr0.4TiO3 (BST) thin film sandwiched between two metal layers in a parallel-plate configuration. Coplanar-waveguide implementation of the varactor shunt switch results in a high-speed RF switch, through a simple two-metal layer Si MMIC compatible process on high-resistivity Si substrates. The experimental RF performance of the switches shows low insertion loss for smaller-area devices, with good isolation for larger-area devices. To optimize the device design, the rf performances of multiple devices are tested, and the electrical parameters are extracted. The capacitance of the varactor shunt switches tested are tunable by more than 4:1 for bias voltages below 12 V. The switching speed of the devices tested is approximately 43 ns, based on the step-response measurements. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 370–374, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21172
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
