RF Linearity/Non-Linearity FoMs of FDSOI NCFET in presence of interface trap charges

Abstract

In this work, linearity of 22 nm FDSOI NCFET in presence of oxide-semiconductor interface trap charges has been systematically examined. To simulate the metal-ferroelectric-metal-insulator-semiconductor (MFMIS) type NCFET, a well calibrated TCAD tool has been used. Firstly, the underlying MIS structure has been constructed and simulated in the TCAD. Subsequently, a 1D - Landau Khalatnikov model (1D-LK) is used to model ferroelectric layer. The linearity and non-linearity figures of merit (FoMs) have been observed for the device. These include coefficients of transconductance (g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m1</inf> , g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m2</inf> , g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m3</inf> ), intermodulation distortion (IM), and input intercept point (IIP) are analysed in detail for various interface trap charge densities.