RF/Linearity figures of merit estimation for GaAs and GaN/SiC-based Nano-HEMTs

Abstract

The performance of three transistors, a GaAs HEMT, a pHEMT and a GaN/SiC HEMT, was compared. Measurements of the standard device properties have been performed on DC, RF, and nonlinearity characteristics to provide more linear design solutions, which helps the entire system perform properly. The GaAs pHEMT experienced a more comprehensive flat band transconductance profile. Still, the GaN HEMT showed higher power and frequency operation capability in terms of modified Johnson's figure of merit based on the cut-off frequency. In addition, the intermodulation distortion (IMD) components, third-order intercept point, IP3 at low frequencies, i.e., 53 MHz and increasing up to higher frequencies, 3.6 GHz and 7.0 GHz also reported. With the need for a sophisticated semiconductor device with high linearity and excellent power handling capacity, it is essential to look at DC, RF, and nonlinearity comparisons to give more linear design solutions for improving the overall system's performance.