RF field effect transistors based on two-dimensional materials

Abstract

Two-dimensional materials (2D) have attracted considerable attention as atomically thin channel materials for field-effect transistors. The 2D materials consists of atom thick covalently bonded lattice, in which the carriers are confined in the atomically thin channel with excellent gate controllability. Additionally, the 2D materials are free of surface dangling bonds and hence exhibit good electronic properties even at the limit of single atom thickness. As a result, the 2D materials can offer significant potential for future electronic transistors scaling to single atomic body thickness. The radio frequency (RF) electronic is one of the most promising field in wireless communication. Here, we review the recent efforts and progress in radio frequency transistors based on 2D materials, including graphene, transition metal dichalcogenide (TMDCs) and black phosphorus. The merits, limits and prospects of each material are also be discussed.