Abstract
The source/drain overlap and depletion length in deep-submicron RF multifinger MOSFETs is accurately determined by a new RF method based on the direct extraction of the extrinsic gate-bulk capacitance using S-parameters biased at VGS > VTH and VDS = 0V. This RF method is proposed to remove the serious error of a conventional C-V method due to the influence of the extrinsic capacitance.
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