Abstract
ABSTRACTThis article presents a three port analysis for separate gate In0.52Al0.48As/In0.53Ga0.47As DG‐HEMT and a small signal equivalent circuit is developed using charge control model. The various intrinsic short circuit admittance parameters (Y‐parameters) are evaluated to extract scattering parameters, to determine the maximum transducer power gain of the device. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2796–2803, 2013
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