Abstract
In this paper, we present a contactless, capacitive method of estimating the resistivity profiles in the direction perpendicular to the semiconductor wafer using frequency domain impedance analysis. Employing a simple model, we show that the different resistivity distributions inside a wafer affect the frequency dependencies of the measured effective capacitance and the Q-factor. We also demonstrate how to estimate resistivity variation inside the sample from the experimental data: C(ω) and Q(ω).
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