Abstract
Single-side heating of a wafer with a free surface by pulsed laser annealing has been analyzed within a quasi-static uncoupled thermoelasticity problem. An analytical relationship that can be used as a criterion of wafer thermal strength and helps to determine nondestructive modes of pulsed laser processing of dielectric and semiconductor wafers has been obtained. The model of calculation has been obtained under the assumption that the thermophysical, mechanical, and optical properties of the materials are temperatureindependent. The experimental verification of the adequacy of the model of calculation has shown quite a satisfactory agreement between the calculation and experimental data.
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