RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

Abdul Naim Khan,S Routray,K Jena,G Chatterjee

doi:10.1007/s12633-021-01605-3

Abstract

In this article, the authors have demonstrated and analyzed various analog/RF, and linearity performances of an AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si substrate with mathematical modeling based Technology Computer-Aided Design (TCAD) simulation. Specifically, an Al2O3 dielectric GR-MOSHEMT has shown tremendous potential in terms of AC/DC figure of merits (FOM’s) such as low leakage current, high transconductance, high Ion/Ioff current ratio, and excellent linear properties corresponding to conventional AlGaN/GaN HEMT and MOSHEMT. The figure-of-merit metrics such as VIP2, VIP3, IIP3, and IDM3 are performed for the different drain to source voltages (VDS) of 2.5 V, 5 V, and 10 V. All the modeling and simulation results are generated by Commercial Silvaco TCAD and found to be satisfactory in terms of high frequency and power applications. The present GR-MOSHEMT device shows superior performance with a threshold voltage of 0.5 V, a Current density of 888 mA, a high transconductance of 225 mS/mm, and a high unit gain cut-off frequency 0.91GHz. The developed AlGaN/GaN GR-MOSHEMT considerably improves the device performance and is also suitable for high power distortion-less RF applications.

Highlights

AlGaN/GaN High linearity parameters of AlGaN/GaN on-state (HEMT) based devices have achieved much recognition for high power and high-frequency applications due to high breakdown voltage [1], high thermal conductivity, high saturation velocity, low effective mass and high two-dimensional electron gas (2DEG) at the GaN/AlGaN interface [2,3,4,5,6,7]
We observed that a reduction in gate length and increment in width of gate recessed MOSHEMT structure leads to an increase in DC characteristics
In this work, a comparative analysis of analog/RF parameters for AlGaN/GaN HEMT, MOSHEMT and Gate recessed MOSHEMT is presented which may provide a basic idea for newly researcher for starting research in this field

Summary

INTRODUCTION

AlGaN/GaN HEMT based devices have achieved much recognition for high power and high-frequency applications due to high breakdown voltage [1], high thermal conductivity, high saturation velocity, low effective mass and high two-dimensional electron gas (2DEG) at the GaN/AlGaN interface [2,3,4,5,6,7]. AlGaN/GaN based metal-oxidesemiconductor MOSHEMT with an insulating dielectric oxide layer (Al2O3) primarily targeted the RF power applications due to its low gate leakage current and improved drain and threshold voltage [8,9,10,11,12]. Gate recessed MOSHEMTs generally work as normally off device and operates in enhancement mode These normally-off devices are more suitable in case of high power amplifier circuits, high power switching applications, and millimeter-wave applications due to their high gate dielectric, low leakage current and positive threshold voltage [20, 21]. We have demonstrated the lattice-matched AlGaN/GaN based HEMT, MOSHEMT and gate recessed MOSHEMT to analyze and compare the analog and linearity performances.

Device Structure and Modeling Equations

D VDS

Intermodulation distortion and linearity performance parameters

Simulation Results and Discussions

CONCLUSION

28. Silvaco