Abstract
Response curves ( V V T/ V B versus REL) of various plastic track detectors (CN, CA, PC, PET) were determined in the region of relatively low etching rate ratios V. Comparative investigations made it clear that these detectors are more sensitive than has hitherto been supposed and the registration threshold concept needs revision. It was found that for most of the commercial plastics the V (REL) curves can be well described by the relation V = 1 + α REL β , where the power index is about 3 within a limit ±10% for pure materials. With CN the situation proved to be more complex in the presence of relatively large amounts of camphor in the matrix of the detector. For the interpretation of the observed shape of the V (REL) curves a theoretical model (similar to that which is used to describe survival curves of irradiated biological objects) was proposed. Experiments performed for a better understanding of the nature of the radiation-damage process in plastics yielded a simple relation REL = const·√ D between the restricted energy loss of nuclear particles and the volume dose D deposited by accelerated electron beams which produced equivalent chemical etchability in the irradiated plastics. The theoretical description of radiation-induced effects in biological objects (as proposed by Kellerer and Rossi) results in a relation between the LET value of nuclear particles and the absorbed dose which is similar to our formula. Finally, it is illustrated that the observed response of PC detectors to protons and alpha-particles can be well explained without supposing any kind of registration threshold.
Published Version
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