Abstract
SynopsisThe energy loss function (ELF) of silicon in a wide photon energy region (0-200 eV) was derived from reflection electron energy loss spectroscopy spectra with a theoretical analysis of the measured data. The accuracy of our result was justified by using the f- and ps-sum rules. Based on the new ELF, individual contributions of surface excitation and the bulk excitation to the REELS spectrum have been separated, and multi-scattering effect in the reflection electron energy loss spectroscopy spectrum has been studied in detail.
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