Abstract
We present a review on the growth and characterization of epitaxial semiconductor thin films, with a large lattice mismatch to Si, on nanometer thin silicon-on-insulator (SOI) compliant substrate. The first part is SiGe on SOI, and the second part is SiC on SOI. Some theoretical analysis for SiGe on SOI is also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.