Abstract
Epitaxial Cu thin films were grown on Al2O3 (0001) substrate by radio frequency magnetron sputtering. The epitaxial relations were found to be Cu(111)//Al2O3(0001 Cu[1_0]//Al(0001 Cu[1_0]//Al2O3[1_100] in the out-of-plane direction and Cu(1_10)//Al2O3(11_20), Cu[111]//Al2O3[0001] in the in-plane direction. Oxygen adsorbed from the air does not affect the structure of Cu/Al2O3(0001) epitaxial thin films. The evolution of the surface roughness can be described by a dynamic scaling exponent. In these Cu/Al2O3(0001) epitaxial thin films, the electrical resistivity ρ decreased as their thickness tCu increased; the trend was described well using a second-order exponential function; this result suggests that ρ changes rapidly when tCu is thinner than the effective thickness teff, and changes gradually when tCu >teff.
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