Abstract
Amorphous In-Ga-Zn-O thin film transistors are expected to be adopted in the next-generation display industry. The most crucial challenges are to improve the reliabilities and instabilities to meet the criteria for practical applications. Reliability issues including gate-bias instability, hot-carrier effect, self-heating effect and light-induced instability in amorphous In-Ga-Zn-O thin film transistor are discussed in this article. Degradation behaviors corresponding to different effects are presented, and the dominant physical mechanisms are proposed to explain the observed phenomena. Moreover, verifications are addressed to support the proposed physical models.
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