Abstract
Characterization and identification of recombination active defects in photovoltaic (PV) materials are essential for improving the performance of solar cells, hence, reducing their levelized cost of electricity. Injection dependent lifetime spectroscopy (IDLS) is a sensitive and widely used technique for investigating defects in silicon. With the development of carrier lifetime measurement techniques and analysis methods, IDLS has gained increasing popularity within the PV research community. In this paper, we review IDLS, from measurement techniques and systems, to existing and emerging defect parameterization methods. We also discuss the limitations and potential pitfalls of lifetime spectroscopy analysis and outline the possible approaches for improvement.
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