Abstract
Apart from detecting the presence of electrically active defects, lifetime measurements allow for a direct identification of defects if the injection and temperature dependence is analyzed. Recent studies have revealed that Temperature Dependent Lifetime Spectroscopy (TDLS) and Injection Dependent Lifetime Spectroscopy (IDLS) are complementary: while the energy level Et is more easily gained from TDLS, IDLS is more adequate to determine the capture cross section ratio k = /spl sigma//sub n///spl sigma//sub p/. The present work demonstrates on intentionally metal-contaminated silicon that a complete defect characterization is achievable by combining IDLS and TDLS. Additionally, it is shown for the first time that k and the band half of the defect location can often be determined from TDLS alone if the entire TDLS-curve is modeled.
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