Abstract
The authors present an overview of the main theoretical approaches used to describe tunnel processes in graphene nanoelectronics. Two currently central theoretical methods of calculating tunnel current, the Bardeen tunneling Hamiltonian approach and the method of nonequilibrium Green's functions, are reviewed in a pedagogical fashion. Several examples are used to illustrate the specific features of the methods. An application of both methods to the analysis of current flow in graphene tunnel field-effect transistors is discussed.
Highlights
Present-day progress in the field of microelectronics follows the way of improving the technique of creating electronic components with the aim of their miniaturization, which increases performance and reduces energy consumption of electronic circuits on their basis
It seems useful to give an overview of the papers where one of the above approaches was effectively used to describe tunnel current in the vertical GIG structure
As far as we know, the first application of the TH method to this problem has been reported in Ref. 11
Summary
Present-day progress in the field of microelectronics follows the way of improving the technique of creating electronic components with the aim of their miniaturization, which increases performance and reduces energy consumption of electronic circuits on their basis. The 2D-2D tunneling is a resonance process that is very sensitive to the change of the band structure under the action of external electric and magnetic fields as well as to the change of the relaxation time of charge carriers This makes it possible both to obtain a noticeable switching effect and study specific features of the electronic spectrum in the material playing the role of coatings. The set of available technologies makes it possible to produce gaps of width of an order of tens of nanometers, and attempts are made at their further reduction.20 This is very important for the production of transistors and other urgent devices, for example, such as DNA sequenator of a new generation.. The final section discusses the recent literature where both theoretical methods were effectively used to describe tunnel current in GIG structures
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