Abstract

Transition metal dichalcogenide (TMDC) semiconductors have attracted significant attention because of their rich electronic/photonic properties and importance for fundamental research and novel device applications. These materials provide a unique opportunity to build up high quality and atomically sharp heterostructures because of the nature of weak van der Waals interlayer interactions. The variable electronic properties of TMDCs (e.g., band gap and their alignment) provide a platform for the design of novel electronic and optoelectronic devices. The integration of TMDC heterostructures into the semiconductor industry is presently hindered by limited options in reliable production methods. Many exciting properties and device architectures which have been studied to date are, in large, based on the exfoliation methods of bulk TMDC crystals. These methods are generally more difficult to consider for large scale integration processes, and hence, continued developments of different fabrication strategies are essential for further advancements in this area. In this review, the authors highlight the recent progress in the fabrication of TMDC heterostructures. The authors will review several methods most commonly used to date for controllable heterostructure formation. One of the focuses will be on TMDC heterostructures fabricated by thermal chemical vapor deposition methods which allow for the control over the resulting materials, individual layers and heterostructures. Another focus would be on the techniques for selective growth of TMDCs. The authors will discuss conventional and unconventional fabrication methods and their advantages and drawbacks and will provide some guidance for future improvements. Mask-assisted and mask-free methods will be presented, which include traditional lithographic techniques (photo- or e-beam lithography) and some unconventional methods such as the focus ion beam and the recently developed direct-write patterning approach, which are shown to be promising for the fabrication of quality TMDC heterostructures.

Highlights

  • In parallel with the studies of single layered Transition metal dichalcogenide (TMDC), van der Waals heterostructures that consist of dissimilar TMDC materials that are stacked/joined in either direction have been gaining extensive attention.12–14 In the systems of traditional semiconductor heterostructures, highly matched crystalline lattices are essential for obtaining high quality interfaces between the two dissimilar composites of building materials

  • Transition metal dichalcogenide (TMDC) semiconductors have attracted significant attention because of their rich electronic/photonic properties and importance for fundamental research and novel device applications. These materials provide a unique opportunity to build up high quality and atomically sharp heterostructures because of the nature of weak van der Waals interlayer interactions

  • The integration of TMDC heterostructures into the semiconductor industry is presently hindered by limited options in reliable production methods

Read more

Summary

INTRODUCTION

In parallel with the studies of single layered TMDCs, van der Waals (vdW) heterostructures that consist of dissimilar TMDC materials that are stacked/joined in either direction (vertical or lateral) have been gaining extensive attention. In the systems of traditional semiconductor heterostructures, highly matched crystalline lattices are essential for obtaining high quality interfaces between the two (or more) dissimilar composites of building materials. In the systems of traditional semiconductor heterostructures, highly matched crystalline lattices are essential for obtaining high quality interfaces between the two (or more) dissimilar composites of building materials. The TMDCs provide a convenient opportunity to achieve high quality interfaces even in the mismatched systems. This unique opportunity is benefited from the weak vdW forces which are regarded as the dominant interactions in TMDC heterostructured systems. We highlight the recent efforts and progress in the fabrication of TMDC heterostructures. An in-depth review will be focused on the current progress in the fabrication of TMDC heterostructures, taking into account the challenges and the proposed solutions. A summary and outlook for the future developments in the heterostructure synthesis will be provided

PROPERTIES OF TMDC SEMICONDUCTORS
PREPARATION OF TMDC SEMICONDUCTOR LAYERS
Bottom-up method
Double vapor CVD method
Thermolysis method
TMDC VERTICAL HETEROSTRUCTURES
Mechanical method
CVD method
LATERAL HETEROSTRUCTURE
TRILAYER HETEROSTRUCTURE
SELECTIVE GROWTH TECHNIQUE
Conventional technique
Direct-write fabrication method
VIII. SUMMARY AND OUTLOOK
Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call