Abstract
The spin-polarized electric transport in ferromagnetic La0.7Sr0.3MnO3 films on piezoelectric substrates with etched steps has been investigated. The Pb(Mg1∕3Nb2∕3)0.72Ti0.28O3 substrate is strained reversibly by application of electric voltage. This includes strain control in film junctions formed at step edges. The film resistance (R) is very sensitive to both strain and magnetic field in a wide temperature range, 30K<T<300K, in contrast to the behavior of step-free films. Both R and magnetoresistance decrease (increase) significantly upon in-plane compression (expansion). In this way, strain is introduced as variable parameter for experiments on step edge grain boundaries.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
