Abstract
Cryogenic-temperature technology is a promising and practical solution for the intense demand for high performance electronics. By utilizing the unique hysteretic behavior of perovskite (La,Pr,Ca)MnO3 observed either as a function of temperature and/or applied electric fields, we discovered low-temperature phases with either metallic and/or insulating resistance values. Low temperature resistivity state can be repeatedly switched by applying various voltage pulses. Resistance value of each phase is stable in time and reproducible after many switching cycles. Phases with intermediate resistance values can also be repeatedly stabilized. The behaviors reported here can be harnessed for cryogenic-temperature phase-change random access memory applications.
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