Abstract
We have reported recent progress in development of the integrated optoelectronic unit on a Si chip. The developed optoelectronic unit includes a porous Si light-emitting diode (LED) connected with a photodetector by an alumina waveguide. Main attention has been devoted to the enhancement of LED parameters. Quantum efficiency as high as 0.4% has been reached. The delay time of 1.2 ns and the rise time of 1.5 ns have been measured for the diodes. Further improvements are also discussed.
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