Abstract
Although organic p-type semiconductors used as hole transport layers (HTLs) have improved the performance of n-i-p structured perovskite photovoltaics, the PCE of high-efficiency PSC has exceeded 25% by post-oxidation of HTL. However, there hasn't been much research done specifically on the external factors that affect and slow down the oxidizing process of HTL. Here, we reveal that the halide ions that migrate into the HTL can significantly slow down the process of chemical oxidation and p-doping by reducing the rate of conductivity growth and Fermi level shift. We also illustrate that the improvement of the hole mobility and carrier density in the HTL can be decelerated by using halide ions as electron donors. These findings collectively emphasize the significance of inhibiting halide ion migration and may contribute to the development of workable solutions to this issue.
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