Abstract
Abstract Processing of electron-irradiated (energy 40 keV, doses up to 2.5 × 10 16 cm − ) oxygen-containing Czochralski silicon (Cz-Si) at up to 1400 K under hydrostatic Ar pressure up to 1.1 GPa results in oxygen accumulation at irradiation-induced irregularities. As revealed by electrical measurements, treatment at about 720 K produces small oxygen clusters exhibiting thermal donor activity. Processing at 1070–1400 K results, as follows from X-ray (synchrotron) data, in a creation of larger oxygen precipitates. So appropriate processing of electron-irradiated Cz-Si at enhanced temperature-pressure can result in a specific enhancement of irradiation-induced defects, of interest for retrospective dosimetry.
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