Abstract
Isothermal heat treatment of Czochralski silicon samples has been performed at 450 °C. Prior to this treatment some samples were irradiated by high-energy electrons (2.0 MeV) and subsequently annealed at 311 °C. As a result, a high concentration of vacancy-dioxygen pairs was obtained. By a comparison of the thermal donor formation kinetics observed in the pretreated samples with that in as-grown samples, the vacancy-dioxygen pair can be ruled out as a ‘‘core’’ for thermal donors. A vacancy-trioxygen pair, which occurs as a result of the annealing of the vacancy-dioxygen pair, is also discussed.
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