Abstract
An overview is given on the work done at Bell Laboratories in which fluorine substitution was employed to tune the structure property relationships of chemically amplified resists. In particular, this paper will detail how structural changes in 2-nitrobenzyl photoacid generator (PAG) affect molecular properties such as quantum yield, thermal stability, and in turn also influence the lithographic characteristics of photoresist formulations such as sensitivity and post-exposure bake (PEB) and post-exposure delay (PED) latitude.
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