Abstract
AbstractThe lithographic performance of chemically amplified positive resists depends on controlling the delay time between the exposure and post‐exposure bake (PEB) process steps. The effect of post‐exposure delay (PED) was investigated in poly(t‐butoxycarbonyloxystyrene‐sulfone) formulated with photoacid generators (PAG) by a variety of analytical techniques including Rutherford backscattering, infrared, X‐ray photoelectron and laser ablation microprobe mass spectrometry. The results indicate that the base‐insoluble residue formed during PED is primarily a surface phenomenon and is a result of incomplete deprotection at the resist surface. It was determined that ppb levels of basic vapors present in the resist processing environment affect process performance profoundly by reacting with the photogenerated acids during PED. Isolation of resist surface from the immediate environment by means of a thin, acidic, and base‐soluble overcoat (covercoat) material dramatically alleviates the environmental effects by quenching basic airborne contaminants and improves PED latitude.
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