Abstract
Cubic boron nitride (c-BN) films were prepared via radio frequency (RF) magnetron sputtering from a hexagonal boron nitride (h-BN) target in a pure N2 plasma. The composition and microstructure morphology of the BN films with different deposition times under pure N2 plasma or mixed Ar/N2 plasma were investigated with respect to the nucleation and growth processes. The pure-phase c-BN growth window was obtained using pure N2 gas. The effects of pure N2 gas on the growth mechanism, structural morphology, and internal compressive stress of the as-synthesized c-BN films were studied. Using pure N2 gas instead of additional Ar resulted in improved microstructure quality and much reduced compressive stress, suggesting a fundamental strategy for achieving high-quality c-BN films.
Highlights
Cubic boron nitride (c-BN) films were prepared via radio frequency (RF) magnetron sputtering from a hexagonal boron nitride (h-BN) target in a pure N2 plasma
We have demonstrated that high-quality c-BN films can be grown on silicon wafers wafers by the RF magnetron sputtering method with pure N2 as working gas
A comprehensive study of study of c-BN films prepared with pure N2 or mixed Ar/N2 plasma for nucleation and further growth c-BN films prepared with pure N2 or mixed Ar/N2 plasma for nucleation and further growth was was systematically carried out by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectrometry (XPS), and atomic force microscopy (AFM)
Summary
Cubic boron nitride (c-BN) films were prepared via radio frequency (RF) magnetron sputtering from a hexagonal boron nitride (h-BN) target in a pure N2 plasma. The composition and microstructure morphology of the BN films with different deposition times under pure N2 plasma or mixed Ar/N2 plasma were investigated with respect to the nucleation and growth processes. The effects of pure N2 gas on the growth mechanism, structural morphology, and internal compressive stress of the as-synthesized c-BN films were studied. Using pure N2 gas instead of additional Ar resulted in improved microstructure quality and much reduced compressive stress, suggesting a fundamental strategy for achieving high-quality c-BN films. C-BN has numerous properties, such as higher chemical stability, both p- and n-type doping availability, surface smoothness, biocompatibility, and hydrophilicity, that make it superior to diamond for applications in protection coatings and cutting tools, high-temperature electronics, ultraviolet (UV) detectors, deep-UV light-emitting diodes, and bio-/chemi-sensors [1,2]. The energetic plasma surface process is essential for the nucleation and growth of c-BN thin films regardless of growth technique
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