Abstract

The polycrystalline sample of Ba0.5Sr1.5FeVO6 is prepared by usual mixed oxide technique at optimized temperature of 1125 °C. The X-ray diffraction (XRD) pattern obtained at room temperature confirms the formation of single phase new compound of orthorhombic crystal structure with lattice parameters a = 7.1078 A, b = 12.6894 A, and c = 13.8542 A. The crystallite size of the material is evaluated by Scherre's method and found to be 40 nm. The Scanning electron microscope (SEM) is used to study the surface morphology of the prepared sample which confirms the formation of high-density material. Fourier transformation Infrared (FTIR) Spectroscopy reveals phase identification of the elements associated in the compound due to the presence of low wave number stretching and bending vibrations of respective octahedral VO6, FeO6, and V–O–V. It also identifies the perovskite phase in the wave number range 850–400 cm−1. From dielectric study, room temperature dielectric constant is found to be er = 250.7, which indicates that the material may be useful for multi-storage device applications. Dielectric characteristics as a function of temperature (25–500 °C) and frequency (100 Hz to 5 MHz) reveal compound that may have multiferroic behavior. For electrical characterization, impedance spectroscopy technique is adopted. It is noticed that material shows non-Debye-type negative temperature coefficient of resistance (NTCR). The conduction behavior of the material basically may be due to defects, oxygen vacancy, and space charge polarization. The current density (J) variation with applied electric field (E) reveals the semiconducting nature. The dc conductivity (σdc) study with inverse of absolute temperature is in accordance with Arrhenius relation.

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