Retention and thermal release of deuterium implanted in beryllium

Abstract

Beryllium was implanted at room temperature with deuterium at 500 and 1500 eV while the amount of D retained was measured as a function of incident fluence using nuclear reaction analysis. At low fluences almost all of the incident D is retained but at high fluences the retention saturates. The retention is well described by a saturation model using a saturation concentration of 0.31 ± 0.05 D/Be and D depth profiles calculated by the TRIM code. Isochronal annealing of implanted samples shows that the D is thermally released in two stages, a broad stage at 400 ± 100°C and a stage at 125°C. For samples implanted to saturation most of the D is released in the 125°C stage but no release occurs at this temperature for low dose implants.