Results of an electron beam test with prototype silicon sensors manufactured by Infineon Technologies Austria AG

Abstract

The demand on silicon based sensors continuously increased since they have been used the first time in particle physics for tracking purposes. In accordance with this development the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) and the European semiconductor manufacturer Infineon Technologies Austria AG engaged in a cooperation to develop prototype p-on-n silicon strip sensors. The sensors of two independent batches with slightly varying production processes are evaluated. To investigate their performance, modules have been assembled with an analogue readout chip (APV25) and operated in an electron beam test. An already well-studied problem of poorly isolated strips, restricted to a small region of the sensor could be further investigated at one sensor and has proven to be cured at the others. Therefore charge sharing effects and their dependency on the bias voltage have been investigated on different regions of the sensors. Furthermore the recorded data of the modules, including one gamma irradiated, document the functionality of the devices.