Abstract
This paper reports growth of ordered Ge nanodots (NDs) with uniform sizes on silicon substrates using porous alumina membranes (PAMs) as templates. The relationships between substrate temperatures (400–600°C) and site distribution of Ge NDs are studied. Ordered arrangements of Ge NDs are realized at 400°C and 500°C, respectively. Due to joint effect of substrate temperature and restrictions from PAM, an uncommon size change trend is found. At 400°C, triangular pyramid-like and short cylindrical Ge NDs are obtained with different nanopore aspect ratios of PAMs. A geometrical optic method is used to analyze the mechanism of Ge NDs with such shapes. Raman characterization is utilized to study the strain in Ge NDs. As a result, almost pure Ge content and 1.5% tensile strain are revealed, which are attributed respectively to the low substrate temperature and thermal mismatch among Si substrate, Ge ND and PAM.
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