Abstract
AbstractA numerical method for the restoration of the depth–concentration profile from the angular distribution of XPS intensities is described. The proposed method is based on the regularization theory. A simpler formulation of the basic relationships than has been given in previous works2–8 enables the inclusion of more general a priori information. A new approach is also given for the choice of the most suitable profile for the experimental data, which enables restoration of profiles with up to two extremes. Calculations performed for all typical profiles show good agreement with the simulated data. The applicability of the method is demonstrated on the depth–concentration profile restoration of the SiO2/Si interface in the silicon surface barrier detector.
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