Abstract
During the process of Laser beam long-range energy transmission based on the photovoltaic principle, the temperature elevation of the photovoltaic cell under Laser irradiation would greatly affect its photoelectric conversion efficiency. In this work, the heat generation mechanism of thin-film photovoltaic cell under Laser irradiation was analyzed based on the energy conversion relationship between light, electricity and heat. The output voltage characteristic of a thin film GaInP/GaAs/Ge triple-junction photovoltaic cell under irradiation of dual-wavelength Laser beam was investigated, and the results show the dependence of the conversion efficiency on the temperature and the valve effect, which was caused by the long wavelength Laser and would sharply reduce the photovoltaic conversion efficiency of short wavelength Laser. The temperature field of the multi-layer structure subjected to Laser irradiation was analyzed by finite element method, and the results indicate that the temperature elevation pattern depends on the spatial distribution of the light absorption and can be adjusted via optimizing the photovoltaic cell structure.
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