Response to comments to "A distributive-transconductance model for border traps in III-V/High-k MOS capacitors"

Abstract

Summary form only given. We would like to thank Professor Taur and his colleagues for pointing out that the variation of an additional factor, emission probability (e <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</sub> ), affects the charging current associated with border traps. While the new derivation shown in their comments is complete, we believe that the transconductance model of the above-named article [ibid., vol. 34, no. 6, pp. 735-737, Jun. 2013] does not introduce significant numerical error when applied to interpret the C-V data (1 kHz-1 MHz) measured from the high-k/GaAs MOS systems discussed in the original article. The original authors present a model to show that in spite of the missing factor in transconductance model, the model does not introduce significant errors within the parameter range discussed in the original work so the conclusions about the GaAs MOS capacitors in the original article should still be considered valid.