Abstract
Measurements with a Cf252 spontaneous fission source have shown that semiconductor detectors exhibit a pulse-height defect for fission fragments, and that this defect is greater for the low-energy, heavy-mass group than for the high-energy, light-mass group. It has also been shown that the defect decreases with increasing bias voltage or average electric field strength within the depletion region. However, for a given electric field strength, the defect was found to be approximately independent of the type and resistivity of the detector. These results are consistent with the hypothesis that the pulse-height defect arises from an inability to collect all of the hole-electron pairs in the dense plasma produced by an energetic fission fragment.
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