Abstract
InAs quantum dots formed by submonolayer insertion of InAs into the GaAs quantum well of a GaAs/AlAs double barrier resonant tunnelling structure were studied. A series of sharp resonant tunnelling peaks in I–V characteristics of resonant tunnelling diodes with InAs insertions were observed. Temperature and magnetic field dependent I–V studies and theoretical modeling led us to conclude that these peaks are the result of resonant tunnelling through localized states associated with InAs quantum dots.
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