Abstract
Negative differential resistance has been observed in the current/voltage characteristics of a double barrier resonant tunnelling structure with Al0.2Ga0.8As emitters, Al0.4Ga0.6As barriers and GaAs quantum well for the first time. The NDR becomes clear at low temperatures below 77 K, and the current/voltage characteristic is asymmetric. Our results demonstrate that high-quality abrupt GaAs-AlxGa1−xAs-AlyGa1−yAs heterojunctions can be of use in resonant tunnelling structures.
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